2SD2012 TRANSISTOR D2012

2SD2012 TRANSISTOR D2012

GO Company Product Code: 2SD2012
Description: 2SD2012 NPN TRANSISTOR
Type of Transistor: BJT
Type Designator: D2012
SMD Transistor Code: 2SD2012
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 A
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Brand: TOSHIBA
Package: TO220

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